Forced vapour-phase decomposition (FVPD) in combination with e.g. TXRF - A method to determine contamination in silicon

Solid State Phenomena

Volumn 92, Issue , 2003, Pages 171-174

  Rink, I ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Crystal defects; FVPD; Metal contamination; VPD

Indexed keywords

CONTAMINATION; CRYSTAL DEFECTS; DECOMPOSITION; DISSOLUTION; OPTICAL MICROSCOPY; SILICON ON INSULATOR TECHNOLOGY; SURFACES; SILICIDES;

FORCED VAPOUR PHASE DECOMPOSITION; METAL CONTAMINATION; TOTAL REFLECTION X RAY FLOURESCENCE; BLISTER FORMATION; FVPD; PREPARATION METHOD; SEMI-QUANTITATIVE ANALYSIS; SOI WAFERS; VAPOUR-PHASE;

SILICON WAFERS;

EID: 0037793350     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.92.171     Document Type: Conference Paper

References (2)

1. I. Rink et al., Electrochem. Soc. Proc. Vol. 2001-29, page 241 (DECON 2001).
2. I. Rink, A. De Veirman, A.J. Janssen, "Relation between contamination of metals and defect formation in Si during oxidation of bulk- and SOI-wafers", this conference.