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Journal of Applied Physics

Volumn 93, Issue 12, 2003, Pages 9659-9664

Spin-dependent recombination electron paramagnetic resonance spectroscopy of defects in irradiated silicon detectors

(7) Eremin, V a Poloskin, D S a Verbitskaya, E a Vlasenko, M P a Vlasenko, L S a Laiho, R b Niinikoski, T O c

a IOFFE INSTITUTE (Russian Federation)

b UNIVERSITY OF TURKU (Finland)

c CERN (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENTS; ELECTRON IRRADIATION; ELECTRON SPIN RESONANCE SPECTROSCOPY; PARAMAGNETIC RESONANCE; PARAMAGNETISM; Q FACTOR MEASUREMENT; SEMICONDUCTOR DOPING; SILICON WAFERS;

SPIN-DEPENDENT RECOMBINATION (SDR);

SILICON SENSORS;

EID: 0037789232 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1576488 Document Type: Article

Times cited : (10)

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