Helium ion-induced stoichiometry modification in hydrogenated silicon oxide films

Applied Physics Letters

Volumn 69, Issue 25, 1996, Pages 3845-3847

  Godet, C ^a   Etemadi, R ^a   Clerc, C ^b  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b 91405 Orsay Campus   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037778034     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117124     Document Type: Article

References (14)

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