Electronic changes of refractive index in intensively pumped Nd:YAG laser crystals

IEEE Journal of Quantum Electronics

Volumn 39, Issue 7, 2003, Pages 910-918

  Antipov, Oleg L ^a   Eremeykin, Oleg N ^a   Savikin, Alexander P ^a   Vorob'ev, Vladimir A ^a   Bredikhin, Dimitry V ^a   Kuznetsov, Maxim S ^a  

^a INSTITUTE OF APPLIED PHYSICS   (Russian Federation)

Author keywords

Diode pumping; Electron energy levels; Excited state absorption; Laser crystals; Nd:YAG; Polarizability; Refractive index changes

Indexed keywords

DOPING (ADDITIVES); ELECTRONIC PROPERTIES; INTERFEROMETERS; LIGHT POLARIZATION; NEODYMIUM LASERS; OPTICAL TESTING; PUMPING (LASER); REFRACTIVE INDEX; SEMICONDUCTOR DIODES; WAVELENGTH DIVISION MULTIPLEXING;

DIODE STACK PUMPING; ELECTRONIC REFRACTIVE INDEX CHANGE; EXCITED STATE ABSORPTION; INTENSIVELY PUMPED LASER CRYSTALS; POLARIZATION INTERFEROMETER;

QUANTUM ELECTRONICS;

EID: 0037767514     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2003.813188     Document Type: Article

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