Interface energy of Au7Si grown in the interfacial layer of truncated hexagonal dipyramidal Au nanoislands on polycrystalline-silicon

Applied Physics Letters

Volumn 82, Issue 25, 2003, Pages 4468-4470

  Wu, J S ^a   Chen, Y F ^a   Dhara, S ^b   Wu, C T ^b   Chen, K H ^b   Chen, L C ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONTACT ANGLE; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; FREE ENERGY; GOLD; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACIAL ENERGY; POLYSILICON; SPUTTER DEPOSITION; TEMPERATURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

NANOISLANDS;

NANOSTRUCTURED MATERIALS;

EID: 0037707070     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1586997     Document Type: Article

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