Effect of annealing temperature on the sol-gel derived Pb(Zr0.3Ti0.7)O3 thin films for pyroelectric application

Materials Science and Engineering: B

Volumn 99, Issue 1-3, 2003, Pages 173-178

  Sun, L L ^a   Liu, W G ^a   Tan, O K ^a   Zhu, W ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Annealing temperature; Pyroelectric coefficient; PZT thin film; Sol gel

Indexed keywords

ANNEALING; DIELECTRIC LOSSES; LEAD COMPOUNDS; PERMITTIVITY; SILICON WAFERS; SOL-GELS; SPECIFIC HEAT;

PYROELECTRIC APPLICATIONS;

THIN FILMS;

EID: 0037701525     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00480-4     Document Type: Conference Paper

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