Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures

Optical Materials

Volumn 23, Issue 1-2, 2003, Pages 197-201

  Shen, B ^a   Zhou, H M ^a   Liu, J ^a   Zhou, Y G ^a   Zhang, R ^a   Shi, Y ^a   Zheng, Y D ^a   Someya, T ^b   Arakawa, Y ^b  

^a NANJING UNIVERSITY   (China)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

AlxGa1 xN GaN heterostructures; Interfacial reactions; Ohmic contact

Indexed keywords

ANNEALING; GALLIUM NITRIDE; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; X RAY DIFFRACTION;

INTERFACIAL REACTIONS;

HETEROJUNCTIONS;

EID: 0037672777     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(03)00083-1     Document Type: Conference Paper

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