Peculiarities of field emission from silicon carbide films

Applied Surface Science

Volumn 215, Issue 1-4 SPEC., 2003, Pages 237-241

  Evtukh, A A ^a   Klyui, N I ^a   Litovchenko, V G ^a   Litvin, Yu M ^a   Korneta, O B ^a   Puzikov, V M ^b   Semenov, A V ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b INSTITUTE OF HYDROBIOLOGY   (Ukraine)

Author keywords

Doping; Er; Field emission; Pr; Rare earth elements; Silicon carbide

Indexed keywords

ELECTRON EMISSION; FIELD EMISSION CATHODES; ION BEAMS; RARE EARTH ELEMENTS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

SILICON TIP ARRAYS;

SEMICONDUCTING FILMS;

EID: 0037672526     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00308-8     Document Type: Conference Paper

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