Transition between quasi 2 and 3D behaviour of the binding energy of screened excitons in semiconducting quantum well structures

Revista Mexicana de Fisica

Volumn 49, Issue 2, 2003, Pages 175-181

  Vazquez G J ^a   Del Castillo Mussot, M ^a   Reyes, J A ^a   Lee, J ^b   Spector, H N ^c  

^a UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^c ILLINOIS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Binding energy of screened excitons; Low dimensional structures; Semiconductors

Indexed keywords

EID: 0037653234     PISSN: 0035001X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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