A New Charge-Control Model for Single- and Double-Heterojunction Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 39, Issue 6, 1992, Pages 1303-1311

  Parikh, Chetan D ^a   Lindholm, Fredrik A ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037638422     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.137308     Document Type: Article

References (25)

1. J. J. Ebers and J. L. Moll, “Large signal behavior of junction transistors,” Proc. IRE, vol. 42, p. 1761, 1954.
2. H. K. Gummel and H. C. Poon, “An integral charge control model of bipolar transistors,” Bell Syst. Tech. J., vol. 49, p. 827, 1970.
3. A. Marty, G. Rey, and J. P. Bailbe, “Electrical behavior of an NpN GaAlAs/GaAs heterojunction transistor,” Solid-State Electron., vol. 22, p. 549, 1979.
4. A. A. Grinberg, M. S. Shur, R. J. Fischer, and H. Morkoc, “An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-31, p. 1758, 1984.
5. M. S. Lundstrom, “Boundary conditions for pn heterojunctions,” Solid-State Electron., vol. 27, p. 491, 1984.
6. M. S. Lundstrom, “An Ebers-Moll model for the heterostructure bipolar transistor,” Solid-State Electron., vol. 29, p. 1173, 1986.
7. B. R. Ryum and I. M. Abdel-Motaleb, “A Gummel-Poon model for abrupt and graded heterojunction bipolar transistors (HBT’s),” Solid-State Electron., vol. 33, p. 896, 1990.
8. W. I. Wang, “On the band offset of AlGaAs/GaAs and beyond,” Solid-State Electron., vol. 29, p. 133, 1986.
9. R. L. Anderson, “Experiments on Ge-GaAs heterojunctions,” Solid-State Electron., vol. 5, p. 341, 1962.
10. S. S. Perlman and D. L. Feucht, “p-n heterojunctions,” Solid-State Electron., vol. 7, p. 911, 1964.
11. C. M. Garner, C. Y. Su, Y. D. Shen, C. S. Lee, G. L. Pearson, and W. E. Spicer, “Interface studies of AlxGa1_xAs-GaAs heterojunctions,” J. Appl. Phys., vol. 50, p. 3383, 1979.
12. C. M. Garner, C. Y. Su, and W. E. Spicer, “Interface studies of AlGaAs-GaAs heterojunctions,” J. Vac. Sci. Technol., vol. 16, p. 1521, 1979.
13. K. Tomizawa, Y. Awano, and N. Hashizume, “Monte Carlo simulation of AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. EDL-5, p. 362, 1984.
14. C. M. Maziar, M. E. Klausmier-Brown, S. Bandyopadhyay, M. S. Lundstrom, and S. Datta, “Monte Carlo evaluation of electron transport in heterojunction bipolar transistor,” IEEE Trans. Electron Devices, vol. ED-33, p. 881, 1986.
15. J. R. Hayes, A. F. J. Levi, A. C. Gossard, and J. H. English, “Base transport dynamics in a heterojunction bipolar transistor, ” Appl. Phys. Lett., vol. 49, p. 1481, 1986.
16. P. M. Enquist, L. P. Ramberg, and L. F. Eastman, “Comparison of compositionally graded to abrupt emitter-base junctions used in the heterojunction bipolar transistor,” J. Appl. Phys., vol. 61, p. 2663, 1987.
17. L. P. Ramberg and T. Ishibashi, “Abrupt interface AlGaAs/GaAs heterojunction bipolar transistors: Carrier heating and junction characteristics,” J. Appl. Phys., vol. 63, p. 809, 1988.
18. H. K. Gummel, “A charge control relation for bipolar transistors,” Bell Syst. Tech. J., vol. 49, p. 115, 1970.
19. H. Kroemer, “Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region,” Solid-State Electron., vol. 28, p. 1101, 1985.
20. I. Getreu, Modeling the Bipolar Transistor. Beaverton, OR: Tek-tronics, 1976.
21. C. D. Parikh and F. A. Lindholm, “Space charge region recombination in heterojunction bipolar transistors,” submitted to IEEE Trans. Electron Devices.
22. P. Antognetti and G. Massobrio, Eds, semiconductor Device Modeling with SPICE. New York: McGraw-Hill, 1988.
23. K. Yokoyama, M. Tomizawa, and A. Yoshii, “Accurate modeling of AlGaAs/GaAs heterostructure bipolar transistor by two dimensional computer simulation,” IEEE Trans. Electron Devices, vol. ED-31, p. 1222, 1984.
24. A. Marty, J. Jamai, J. P. Vanel, N. Fabre, J. P. Bailbe, N. Duhamel, C. Dubon-Chevallier, and J. Tasselli, “Fabrication and d.c. characterization of GaAlAs/GaAs double heterojunction bipolar transistor,” Solid-State Electron., vol. 31, p. 1375, 1988.
25. S. G. Christov, “Unified theory of thermionic and field emission from semiconductors,” Phys. Status Solidi, vol. 21, p. 159, 1967.