Field-dependent effective temperature and variable range hopping: Application to dark dc conductivity in doped a-Si:H

Journal of Applied Physics

Volumn 93, Issue 10 1, 2003, Pages 6150-6153

  Arkhipov, V I ^a   Emelianova, E V ^b   Adriaenssens, G J ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC FIELD EFFECTS; FERMI LEVEL; PHONONS;

DENSITY-OF-STATES (DOS) DISTRIBUTION;

ELECTRIC CONDUCTIVITY;

EID: 0037636349     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1565673     Document Type: Article

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