The benefits of high-K dielectrics for polymer TFTs

Materials Research Society Symposium - Proceedings

Volumn 734, Issue , 2003, Pages 213-218

  Raja, Munira ^a   Sedghi, Naser ^a   Higgins, Simon J ^a   Eccleston, W ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; PERMITTIVITY; SEMICONDUCTOR DOPING; SWITCHING; THIN FILM TRANSISTORS;

SWITCHING SPEED;

DIELECTRIC MATERIALS;

EID: 0037635408     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. J. Robertson, MRS Bulletin 27 (3), 217 (2002).
2. R. D. McCullough, S. P. Williams, S. Tristram-Nagle, M. Jayayram, P. C. Ewbank, and L. Miller, Synth. Met. 69, 279 (1995).
3. M. Trznadel, A. Pron, M. Zagorska, R. Chrzaszcz, and J. Pielichowski, Macromolecules 31, 5051 (1998).