Pt/SrBi4Ti4O15/Si-MOS system: Preliminary study employing an inverted MOS configuration

Materials Science and Engineering B

Volumn 41, Issue 1, 1996, Pages 174-177

  Yamamuro, Kazuyuki ^a   Tachiki, Minoru ^a   Kobayashi, Takeshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Bismuth layered structure ferroelectrics; Eclipse pulsed laser deposition method; Metal oxide semiconductor system; Oxide films

Indexed keywords

BISMUTH; ELECTRODES; EXPERIMENTS; METALLIC FILMS; PULSED LASER APPLICATIONS; SEMICONDUCTOR MATERIALS;

ECLIPSE PULSED LASER DEPOSITION METHOD; METAL OXIDE SEMICONDUCTOR DEVICE; OXIDE FILMS;

MOS DEVICES;

EID: 0037630595     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01647-9     Document Type: Article

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