Higher anisotropy and improved surface conditions for 90 nm node MoSiON ICP dry etch

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4889, Issue 1, 2002, Pages 694-701

  Min, Dong Soo ^a   Chang, Byung Soo ^a   Kwon, Hyuk Joo ^a   Choi, Boo Yeon ^a  

^a Photronics PKL   (South Korea)

Author keywords

Anisotropy; CF4; Dry etch; MoSiON; PSM

Indexed keywords

ANISOTROPY; DRY ETCHING; MASKS; MORPHOLOGY; PHASE SHIFT; SURFACE PHENOMENA;

PHASE SHIFT MASKS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0037627695     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.467493     Document Type: Conference Paper

References (4)

1. ITRS Roadmap, 2001
2. J. Plumhoff, C. Constantine, C. Strawn, J. Shin "Investigation of MoSi Etch Processes for Embedded Attenuating Phase Shift Mask Applications Utilizing a Next Generation ICP Source" 21st Annual BACUS Symposium on Photomask Technology, Proc. SPIE Vol. 4562 pp. 694-703(2001)
3. Se-Jong Choi et al "Highly Anisotropic Etching of Phase shift mask using ICP of CF4-SF6-CHF3-Cl2/CF4 gas mixtures" Proceedings of Photomask and Next-generation Lithography Mask technology IIX, (2002)(to be published)
4. Han-Ming et al "CF4/O2 plasma Simulation and Comparison with Quartz Etch Experiment" 21st Annual BACUS Symposium on Photomask Technology, Proc. SPIE Vol. 4409 pp.409-417 (2001)