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Volumn 65, Issue 4, 2003, Pages 478-488

Role of oxidizer in the chemical mechanical planarization of the Ti/TiN barrier layer

Author keywords

Barrier layer; CMP; Oxidizer; Removal rate

Indexed keywords

ABRASION; ALUMINA; CHEMICAL MECHANICAL POLISHING; PH EFFECTS; SURFACE CHEMISTRY; TITANIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0037623281     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00177-1     Document Type: Article
Times cited : (41)

References (16)
  • 5
    • 0038341179 scopus 로고    scopus 로고
    • Chemical mechanical polishing in IC device manufacturing III
    • Y.A. Arimoto, R.L. Opila, C. Reidsema Simpson, K.B. Sundaram, I. Ali, & Y. Homma
    • Tamboli D., Desai V., Seal S., Sundaram K.B. Chemical mechanical polishing in IC device manufacturing III. Arimoto Y.A., Opila R.L., Reidsema Simpson C., Sundaram K.B., Ali I., Homma Y. The Electrochemical Society Proceedings:1999;333.
    • (1999) The Electrochemical Society Proceedings , pp. 333
    • Tamboli, D.1    Desai, V.2    Seal, S.3    Sundaram, K.B.4
  • 6
    • 0038003190 scopus 로고    scopus 로고
    • Chemical mechanical planarization IV
    • R.L. Opila, C. Reidsema-Simpson, K.B. Sundaram, & S. Seal
    • Tamboli D., Desai V., Seal S. Chemical mechanical planarization IV. Opila R.L., Reidsema-Simpson C., Sundaram K.B., Seal S. The Electrochemical Society Proceedings: 2000;212.
    • (2000) The Electrochemical Society Proceedings , pp. 212
    • Tamboli, D.1    Desai, V.2    Seal, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.