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Volumn 54, Issue 11, 1996, Pages 7662-7665

Saturation of the internal photoemission effect in forward biased silicon junctions

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Indexed keywords

EID: 0037567024 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.54.7662 Document Type: Article

Times cited : (3)

References (7)

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2
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- Ashmontas, S.¹ Shirmulis, E.²

4
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- M. López Sáenz, and J. M. Guerra Pérez, Phys. Rev. B 52, 11t120 (1995).
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- López Sáenz, M.¹ Guerra, J.²

5
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- M. López Sáenz and J. M. Guerra Pérez, Appl. Phys. Lett. 68, 675 (1996).
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- López Sáenz, M.¹ Guerra Pérez, J.²

6
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- F. Encinas Sanz, J. M. Guerra Pérez and E. Domínguez Ferrari, Phys. Rev. B 47, 4517 (1993).
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- Encinas Sanz, F.¹ Guerra Pérez, J.² Domínguez Ferrari, E.³

7
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- Cambridge University Press, Cambridge, England
- R. A. Smith, Semiconductors (Cambridge University Press, Cambridge, England, 1961).
- (1961) Semiconductors
- Smith, R.¹

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