STM and STS on single dopants and Au-induced chains at the Si(1 1 1) surface

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 105-109

  Surgers C ^a   Schock M ^a   Trappmann, T ^a   Lohneysen H V ^a,b  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

Dopants; Reconstruction; Scanning tunneling microscopy; Scanning tunneling spectroscopy; Silicon surfaces

Indexed keywords

DOPING (ADDITIVES); GOLD; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON;

SINGLE DOPANTS;

SURFACE PROPERTIES;

EID: 0037566177     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00032-1     Document Type: Conference Paper

References (9)

1. Hamers R.J., Tromp R.M., Demuth J.E., Phys. Rev. Lett. 56:1986;1972.
2. Stroscio J.A., Feenstra R.M., Fein A.P., Phys. Rev. Lett. 57:1986;2579.
3. Jałochowski M., Strozak M., Zdyb R., Surf. Sci. 375:1997;203.
4. K.N. Altmann, J.N. Crain, A. Kirakosian, J.-L. Lin, D.Y. Petrovykh, F.J. Himpsel, R. Losio, Phys. Rev. B 64 (2001) 035406.
5. Trappmann T., Sürgers C., v. Löhneysen H., Europhys. Lett. 38:1997;177.
6. Schöck M., Sürgers C., v. Löhneysen H., Phys. Rev. B. 61:2000;7622.
7. Lyo I.W., Kaxiras E., Avouris Ph., Phys. Rev. Lett. 63:1989;1261.
8. Bedrossian P., Maede R.D., Mortensen K., Chen D.M., Golovchenko J.A., Vanderbilt D., Phys. Rev. Lett. 63:1989;1257.
9. D. Sánchez-Portal, J.D. Gale, A. Garcia, R.M. Martin, Phys. Rev. B 65 (2002) 081401.