메뉴 건너뛰기




Volumn 82, Issue 23, 2003, Pages 4020-4022

Temperature transients and thermal properties of GaAs/AlGaAs quantum-cascade lasers

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DIFFUSION; ELECTRIC EXCITATION; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; TRANSIENTS;

EID: 0037492233     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1582374     Document Type: Article
Times cited : (13)

References (14)
  • 8
    • 0020193772 scopus 로고
    • J. S. Blakemore, J. Appl. Phys. 53, R123 (1982); Properties of GaAs EMIS datareviews series No. 2 (INSPEC, Stevenage, UK, 1990).
    • (1982) J. Appl. Phys. , vol.53
    • Blakemore, J.S.1
  • 9
    • 0020193772 scopus 로고
    • INSPEC, Stevenage, UK
    • J. S. Blakemore, J. Appl. Phys. 53, R123 (1982); Properties of GaAs EMIS datareviews series No. 2 (INSPEC, Stevenage, UK, 1990).
    • (1990) Properties of GaAs EMIS Datareviews Series , vol.2
  • 10
    • 0003847047 scopus 로고
    • McGraw-Hill, New York
    • K. Ng, Complete Guide to Semiconductor Devices (McGraw-Hill, New York, 1995); Properties of AlGaAs EMIS data reviews series No. 7 (INSPEC, Stevenage, UK, 1993).
    • (1995) Complete Guide to Semiconductor Devices
    • Ng, K.1
  • 11
    • 0037569816 scopus 로고
    • INSPEC, Stevenage, UK
    • K. Ng, Complete Guide to Semiconductor Devices (McGraw-Hill, New York, 1995); Properties of AlGaAs EMIS data reviews series No. 7 (INSPEC, Stevenage, UK, 1993).
    • (1993) Properties of AlGaAs EMIS Data Reviews Series , vol.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.