Influence of As passivation on the electronic level alignment at BeTe/Si(111) interfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 20, 2003, Pages

  Gleim, T ^a   Weinhardt, L ^a   Schmidt, T ^a   Fink, R ^a   Heske, C ^a   Umbach, E ^a   Hansen, L ^a   Landwehr, G ^a   Waag, A ^b   Fleszar, A ^a   Richter, B ^c   Ammon, C ^d   Probst, M ^d   Steinruck H P ^d  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

^c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^d UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BERYLLIUM; SILICON DERIVATIVE; TELLURIUM DERIVATIVE;

ARTICLE; DENSITY; ELECTRONICS; ENERGY; EXCITATION; INJECTION; MEASUREMENT; STRUCTURE ANALYSIS; THEORY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0037488438     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.205315     Document Type: Article

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