Function principle of a relaxation oscillator based on a bistable quantum hall device

Applied Physics Letters

Volumn 82, Issue 13, 2003, Pages 2068-2070

  Nachtwei, G ^a   Kalugin, N G ^a   Sagol B E ^a   Stellmach, Ch ^a   Hein, G ^b  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; HALL EFFECT; HETEROJUNCTIONS; HYSTERESIS; SEMICONDUCTING GALLIUM ARSENIDE; SHUBNIKOV-DE HAAS EFFECT;

HALL DEVICES;

RELAXATION OSCILLATORS;

EID: 0037475048     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1563729     Document Type: Article

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