Study of SiC polytype heterojunctions

Materials Science and Engineering: B

Volumn 98, Issue 1, 2003, Pages 65-69

  Eshun, E E ^a   Spencer, M G ^b   Griffin, James ^c   Zhou, Peizen ^c   Harris, Garry L ^c  

^a IBM MICROELECTRONICS   (United States)

^b School of Operations Research and Industrial Engineering   (United States)

^c HOWARD UNIVERSITY   (United States)

Author keywords

Heterojunction; Polytype; SiC; SiC

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; INCLUSIONS; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

MOSAICITY;

HETEROJUNCTIONS;

EID: 0037465488     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00570-6     Document Type: Article

References (7)

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3. Powell J.A., Larkin D.J., Petit J.B., Edgar J.H. Yang C., Rahman M.M., Harris G.L. Amorphous and Crystalline Silicon Carbide IV. 1992;23-30 Springer, Berlin.
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