Excitons in InP/InAs inhomogeneous quantum dots

Journal of Physics Condensed Matter

Volumn 15, Issue 2, 2003, Pages 175-184

  Assaid, E ^a,b   Feddi, E ^b   El Khamkhami, J ^b   Dujardin, F ^c  

^a FACULTÉ DES SCIENCES   (Morocco)

^b Higher Teacher Training School   (Morocco)

^c Lab Phys Molec et des Collisions   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRONIC DENSITY OF STATES; EXCITONS; QUANTUM THEORY; SEMICONDUCTING INDIUM COMPOUNDS; VARIATIONAL TECHNIQUES;

EXCITON BINDING ENERGY; INDIUM ARSENIDE; QUANTUM CONFINEMENT; RITZ VARIATIONAL METHOD;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037460319     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/2/317     Document Type: Article

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