Metal-insulator transition in epitaxial thin films at BaRuO3

Journal of Physics D: Applied Physics

Volumn 36, Issue 2, 2003, Pages 156-159

  Kaur, Davinder ^a   Rao, K V ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY ROORKEE   (India)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BARIUM COMPOUNDS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; GRAIN BOUNDARIES; METAL INSULATOR TRANSITION; POSITIVE IONS; PULSED LASER DEPOSITION; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; TEMPERATURE; X RAY DIFFRACTION;

EPITAXIAL THIN FILMS; GRAIN BOUNDARY SCATTERING; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 0037458066     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/2/313     Document Type: Article

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