Effects of interfacial interaction potential on the sublimation rates of TNT films on a silica surface examined by QCM and AFM techniques

Surface Science

Volumn 530, Issue 1-2, 2003, Pages

  Mu, R ^a   Ueda, A ^a   Liu, Y C ^c,d   Wu, M ^a   Henderson, D O ^a   Lareau, R T ^b   Chamberlain, R T ^b  

^a FISK UNIVERSITY   (United States)

^b WILLIAM J HUGHES TECHNICAL CENTER   (United States)

^c CHANGCHUN INSTITUTE OF OPTICS   (China)

^d NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

Atomic force microscopy; Evaporation and sublimation; Interface states; Silicon oxides

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; EVAPORATION; INTERFACES (MATERIALS); SILICA; SUBLIMATION; SUBSTRATES; SURFACE STRUCTURE;

QUARTZ CRYSTAL MICROBALANCE (QCM);

ULTRATHIN FILMS;

EID: 0037457521     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00380-7     Document Type: Article

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