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Volumn 91, Issue 6, 2003, Pages 663-674

Evolution of defect states in doped polythiophene: A study based on the method of simulated annealing

Author keywords

Bipolaron; Defect state; Doped; Polythiophene; Simulated annealing

Indexed keywords

DEFECTS; DOPING (ADDITIVES); FERMI LEVEL; HAMILTONIANS; SIMULATED ANNEALING;

EID: 0037456406     PISSN: 00207608     EISSN: None     Source Type: Journal    
DOI: 10.1002/qua.10477     Document Type: Article
Times cited : (4)

References (29)
  • 20
  • 21
    • 33749540003 scopus 로고
    • Su, W. P.; Schrieffer, J. R.; Heeger, A. J. Phys Rev 1980, B22, 2000; Bredas, J. L.; Chance, R. R.; Silbey, R. Phys Rev 1982, B26, 5843.
    • (1982) Phys Rev , vol.B26 , pp. 5843
    • Bredas, J.L.1    Chance, R.R.2    Silbey, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.