Vacancy formation enthalpy at high pressures in tantalum

Journal of Physics Condensed Matter

Volumn 15, Issue 6, 2003, Pages 855-861

  Mukherjee, Sonali ^a   Cohen, R E ^a   Gülseren, Oǧguz ^b,c  

^a GEOPHYSICAL LABORATORY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ENTHALPY; HIGH PRESSURE EFFECTS; MECHANICAL PROPERTIES; NUMERICAL ANALYSIS; TEMPERATURE;

PSEUDOPOTENTIAL METHOD; VACANCY FORMATION;

TANTALUM;

EID: 0037453874     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/6/312     Document Type: Article

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