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Volumn 81, Issue 25, 2003, Pages 4859-4861

A high-performance cryogenic amplifier based on a radio-frequency single electron transistor

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITANCE; CRYOGENICS; ELECTRONS; RESISTORS; TRANSISTORS;

EID: 0037449330     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1530751     Document Type: Article
Times cited : (22)

References (19)
  • 3
    • 0003423226 scopus 로고
    • Plenum, New York
    • M. H. Devoret and H. Grabert, Single Charge Tunneling (Plenum, New York, 1992); M. W. Keller, A. L. Eichenberger, J. M. Martinis, and N. M. Zimmerman, Science 285, 1706 (1999).
    • (1992) Single Charge Tunneling
    • Devoret, M.H.1    Grabert, H.2
  • 6
    • 0033554701 scopus 로고    scopus 로고
    • J. Mather, Nature (London) 401, 654 (1999); N. Booth and D. Goldie, Supercond. Sci. Technol. 9, 493 (1996).
    • (1999) Nature (London) , vol.401 , pp. 654
    • Mather, J.1
  • 16
    • 0012554963 scopus 로고    scopus 로고
    • note
    • With the parasitic phase shifts present in our apparatus a stable operating point at maximum SET gain was not possible. Reduction of these parasitics along with a reduction of the load capacitance should allow an optimal setting of the gain.
  • 17
    • 0002574080 scopus 로고
    • 2SK 147 JFET has an optimum impedance of 1.2 MΩ, a noise temperature of 30 mK, and an input capacitance of 150 pF; see P. L. Richards, J. Appl. Phys. 76, 1 (1994).
    • (1994) J. Appl. Phys. , vol.76 , pp. 1
    • Richards, P.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.