Electron conduction mechanism of Si(1 0 0)/Ag and Si(1 0 0)/H/Ag

Applied Surface Science

Volumn 206, Issue 1-4, 2003, Pages 60-66

  Iida, S ^a   Hiraoka, A ^a   Noritake, H ^a   Tanaka, R ^a   Yukawa, M ^a  

^a OSAKA SANGYO UNIVERSITY   (Japan)

Author keywords

Dimer; Quantum dot; Surface state band; Surfactant

Indexed keywords

CARRIER CONCENTRATION; DIMERS; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); OSCILLATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SILVER; SURFACE ACTIVE AGENTS; ULTRAHIGH VACUUM;

ELECTRON CONDUCTION MECHANISMS;

THIN FILMS;

EID: 0037441193     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)01160-1     Document Type: Article

References (18)

1. Iida S., Abe S., Hidemura Y. Jpn. J. Appl. Phys. 34:1995;4087.
2. Iida S., Hiraoka A., Tai T., Noritake H. Jpn. J. Appl. Phys. 40:2001;L618.
3. Hamers R.J., Tromp R.M., Demuth J.E. Phys. Rev. B34:1986;5343.
4. Enta T., Suzuki S., Kono S. Phys. Rev. Lett. 63:1990;2704.
5. Brocks G., Kelly P.J. Phys. Lett. 76:1996;2362.
6. Yamasaki T., Uda T., Terakawa K. Phys. Rev. Lett. 76:1996;2494.
7. Smith A.P., Jonsson H. Phys. Rev. Lett. 77:1996;1326.
8. Borovsky B., Krueger M., Ganz E. Phys. Rev. Lett. 78:1997;4229.
9. Carpinelli J.M., Swartzentruber B.S. Phys. Rev. B58:1998;R13423.
10. Wan K.J., Lin X.F., Nogami J. Phys. Rev. B45:1992;9509.
11. Hasegawa S., Tong X., Takada S., Nagao N. Prog. Surf. Sci. 60:1999;89.
12. Borovsky B., Krueger M., Gunz E. Phys. Rev. Lett. 78:1997;4229.
13. Zandvliet H.J.W., Galea T.M., Zoethout E., Poelsema B. Phys. Rev. Lett. 84:2000;1523.
14. Mo Y.W., Lagally M.G. Surf. Sci. 248:1991;331.
15. Sandomirskii V.B. Sov. Phys. JETP. 25:1967;101.
16. Niwano M., Terashi M., Kuge J. Surf. Sci. 420:1999;6.
17. Sakurai T., Hagstrum H.D. Phys. Rev. B14:1976;1953.
18. Oura K., Sumitomo K., Kobayashi T., Kinoshita T., Tanaka Y., Shoji F., Katayama I. Surf. Sci. 254:1991;L460.