The formation of the low-dimensional porous silicon-based structures with extremely high exciton binding energy

Materials Science and Engineering C

Volumn 23, Issue 1-2, 2003, Pages 165-170

  Efremov, A A ^a   Litovchenko, V G ^a   Sarikov, A V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Exciton luminescence; Modelling; Porous silicon; Si quantum dots

Indexed keywords

BINDING ENERGY; DISSOLUTION; ELECTROCHEMISTRY; ETCHING; EXCITONS; MORPHOLOGY; PHOTOLUMINESCENCE; POROUS MATERIALS;

POROUS LAYERS;

SILICON;

POROUS MEDIUM;

EID: 0037439767     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0928-4931(02)00263-1     Document Type: Article

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