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Volumn 67, Issue 3, 2003, Pages 353051-3530512

Photoluminescence investigations of two-dimensional hole Landau levels in p-type single AlxGa1-xAs/GaAs heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM DERIVATIVE; ARSENIC DERIVATIVE; GALLIUM;

EID: 0037438304     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (23)

References (53)
  • 40
    • 0003395029 scopus 로고
    • Landolt-Börnstein, New Series, Group III, edited by O. Madelung (Springer, Berlin)
    • Numerical Data and Functional Relationships in Science and Technology, Landolt-Börnstein, New Series, Group III, Vol. 17, edited by O. Madelung (Springer, Berlin, 1982).
    • (1982) Numerical Data and Functional Relationships in Science and Technology , vol.17
  • 41
    • 33646614631 scopus 로고    scopus 로고
    • note
    • The different magnetic field dependence of the D and H lines is more evident when higher excitation powers are used in measurements Ref. 33. This allows one to observe free-carrier recombinations (H lines) at lower magnetic fields.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.