Characteristics of ultra-low-energy Cs+ ion beam bombardments

Applied Surface Science

Volumn 203, Issue 204, 2003, Pages 323-328

  Li, Zhanping ^a   Hoshi, Takahiro ^a   Oiwa, Retsu ^a  

^a ULVAC PHI Inc   (Japan)

Author keywords

Delta doped B; Depth resolution; Scale distortion; Shallow implants; Ultra low energy probe; Useful yield

Indexed keywords

CESIUM; DOPING (ADDITIVES); ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; SURFACE PHENOMENA; THIN FILMS;

DEPTH RESOLUTION;

ION BOMBARDMENT;

EID: 0037438081     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00669-4     Document Type: Article

References (5)

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2. T. Hoshi, M. Kudo, in: A. Benninghoven, et al. (Eds.), Proceedings of the SIMS XII, Elsevier, Amsterdam, 1999, p. 549.
3. Schueler B.W., Reich D.F. J. Vac. Sci. Technol. B. 18(1):2000;496.
4. Magee C.W.et al. J. Vac. Sci. Technol. B. 18(1):2000;489.
5. Y. Kataoka, et al., in: Proceedings of the Ultra Shallow Junction 2001 Meeting, USA, 2001.