Silicon isotope fractionation during FZ growth of silicon crystals

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 802-805

  Morishita, Y ^a   Satoh, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

FZ instrument; Isotope fractionation; Multicollectors; Silicon isotopes; SIMS

Indexed keywords

CRYSTAL GROWTH; EVAPORATION; FRACTIONATION; SECONDARY ION MASS SPECTROMETRY; SILICON;

SILICON ISOTOPES;

ISOTOPES;

EID: 0037438055     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00828-0     Document Type: Conference Paper

References (4)

1. Y. Morishita, N.T. Kita, S. Togashi, Secondary Ion Mass Spectrometry, SIMS XII, Elsevier, Amsterdam, 2000, p. 1003.
2. Y. Morishita, A. Sasaki, N.T. Kita, S. Togashi, Secondary Ion Mass Spectrometry, SIMS XI, Wiley, New York, 1998, p. 67.
3. De Bièvre P., Valkiers S., Peiser H.S. J. Res. Natl. Inst. Stand. Tech. 99:1994;201.
4. K. Fujii, M. Tanaka, Y. Nezu, K. Nakayama, H. Fujimoto, P. De Bièvre, S. Valkiers, Abstracts of the 17th Japan Symposium on Thermophysical Properties, 1996, p. 291.