SIMS depth profile of copper in low-k dielectrics under electron irradiation for charge compensation

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 512-515

  Yamada, K ^a   Fujiyama, N ^a   Sameshima, J ^a   Kamoto, R ^a   Karen, A ^a  

^a TORAY RESEARCH CENTER INC   (Japan)

Author keywords

Copper; Electron irradiation; Low k dielectrics

Indexed keywords

DECOMPOSITION; DIELECTRIC MATERIALS; DIFFUSION; ELECTRON IRRADIATION; SECONDARY ION MASS SPECTROMETRY; THICK FILMS;

CHARGE COMPENSATION;

COPPER;

EID: 0037438045     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00767-5     Document Type: Conference Paper

References (3)

1. H. Cui, et al., in: Proceedings of the 2001 IEEE International Interconnect Technology Conference.
2. N. Matsubara, et al., in: Proceedings of the 2001 IEEE International Interconnect Technology Conference.
3. J.M. Mckinley, et al., in: Proceedings of the SIMS XII, 2000, 607 pp.