Influence of Zr-doping on the microstructure and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 materials

Materials Chemistry and Physics

Volumn 79, Issue 2-3, 2003, Pages 266-269

  Lan, Wen An ^a   Liang, Mei Hui ^a   Hu, Chen Ti ^a   Liu, Kuo Shung ^a   Lin, I Nan ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Ba(Mg,Ta)O3; Microwave dielectrics; Ordering effect

Indexed keywords

BARIUM COMPOUNDS; DEGRADATION; DOPING (ADDITIVES); MICROSTRUCTURE; SINTERING; ZIRCONIUM;

MICROWAVE DIELECTRIC MATERIALS;

DIELECTRIC MATERIALS;

EID: 0037431115     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(02)00271-7     Document Type: Article

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