High-temperature behavior of an amorphous carbon layer on SiC particles

Surface Science

Volumn 527, Issue 1-3, 2003, Pages

  Kimura, Yuki ^a   Saito, Yoshio ^b   Kaito, Chihiro ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Carbon; Electron microscopy; Silicon carbide; Surface diffusion

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALS; ELECTRON MICROSCOPY; HIGH TEMPERATURE EFFECTS; SURFACE PHENOMENA;

CRYSTAL SURFACES;

SILICON CARBIDE;

EID: 0037430712     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00011-6     Document Type: Article

References (5)

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4. Kaito C. Jpn. J. Appl. Phys. 24:1985;261.
5. Wada S., Tokunaga A.T., Kaito C., Kimura S. Astron. Astrophys. 339:1998;L61.