Shot noise in negative-differential-conductance devices

Applied Physics Letters

Volumn 82, Issue 10, 2003, Pages 1568-1570

  Song, W ^a   Mendez, E E ^a   Kuznetsov, V ^a   Nielsen, B ^a  

^a STONY BROOK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ENERGY GAP; POISSON DISTRIBUTION; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; SHOT NOISE; THERMAL EFFECTS;

NEGATIVE-DIFFERENTIAL-CONDUCTANCE (NDC) DEVICES;

TUNNEL DIODES;

EID: 0037429865     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1558953     Document Type: Article

References (13)

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11. The mechanism that gives rise to NDC in a superlattice tunnel diode is analogous to that of a conventional tunnel (Esaki) diode, whose noise properties were studied long ago [J. J. Tiemann, Proc. IRE 48, 1418 (1960)]. Unfortunately, those early experiments were done at room temperature and using a very primitive (for today's standards) noise-measurement setup, so that the results were not conclusive. The data showed that the noise's power spectral density was somewhat larger than 2eI at the beginning of the NDC region. This behavior was accounted for by a model that assumed full shot noise and included the contribution of both the emitter-to-collector and collector-to-emitter currents.
12. 0 is the free-electron mass.
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