Electronic and geometric structures of Gen- and Gen+ (n = 5-10) clusters in comparison with corresponding Sin ions

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 307, Issue 5-6, 2003, Pages 318-325

  Li, Bao Xing ^a,b   Cao, Pei Lin ^a   Song, Bin ^a   Ye, Zhe Zhen ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b HANGZHOU NORMAL UNIVERSITY   (China)

Author keywords

Energy gap; Ge ion; Ground state structure

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY GAP; GEOMETRY; GROUND STATE; MOLECULAR DYNAMICS; SILICON;

ELECTRONIC AND GEOMETRIC STRUCTURES; FP-LMTO; GE CLUSTER; GEOMETRICAL CONFIGURATIONS; GROUND-STATE STRUCTURES; LINEAR MUFFIN-TIN ORBITALS; SI IONS; STRUCTURAL DISTORTIONS;

IONS;

GERMANIUM DERIVATIVE; SILICON DERIVATIVE;

ARTICLE; CALCULATION; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; ELECTRONICS; ENERGY; GEOMETRY; MOLECULAR DYNAMICS; STRUCTURE ANALYSIS;

EID: 0037429234     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(02)01729-2     Document Type: Article

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