Optical transitions in artificial few-electron atoms strongly confined inside ZnO nanocrystals

Physical Review Letters

Volumn 90, Issue 9, 2003, Pages

  Germeau, A ^a   Roest, A L ^a   Vanmaekelbergh, D ^a   Allan, G ^b   Delerue, C ^b   Meulenkamp, E A ^c  

^a UTRECHT UNIVERSITY   (Netherlands)

^b INSTITUT D ELECTRONIQUE   (France)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; APPROXIMATION THEORY; CRYSTAL LATTICES; ELECTRONS; ETHANOL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE; ULTRAVIOLET RADIATION; ZINC OXIDE;

ELECTRIC DIPOLE TRANSITIONS; ELECTROCHEMICAL POTENTIAL; OPTICAL TRANSITIONS; RAPID ELECTRON TRANSFER; SINGLE PARTICLE ENERGY SEPARATION; TIGHT BINDING THEORY;

ATOMS;

EID: 0037424156     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

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7. We have used the spds* tight-binding approximation (including spin-orbit coupling). The tight-binding parameters are fitted to the bulk ab initio pseudopotential energy dispersion curve and the experimental electron and hole effective masses. The lowest conduction level of a ZnO quantum dot has S symmetry and is doubly degenerate. In order of increasing energy we further have a P level (sixfold degenerate), a D level (tenfold degenerate), a S′ level (doubly degenerate), and an F level (14-fold degenerate).
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