Monte Carlo algorithms for stationary device simulations

Mathematics and Computers in Simulation

Volumn 62, Issue 3-6, 2003, Pages 453-461

  Nedjalkov, M ^a   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Monte Carlo algorithms; Semiconductor devices; Simulation

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; MONTE CARLO METHODS; RANDOM PROCESSES;

REGENERATIVE STATIONARY PROCESSES;

SEMICONDUCTOR DEVICES;

EID: 0037417074     PISSN: 03784754     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0378-4754(02)00246-X     Document Type: Conference Paper

References (4)

1. I. Sobol, Numerical Methods Monte Carlo, Nauka, Moskow, 1973.
2. Jacoboni C., Reggiani L., The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev. Modern Phys. 55:1983;3.
3. R. Rubinstein, Simulation and the Monte Carlo Method, Wiley, New York, 1981.
4. H. Kosina, M. Nedjalkov, S. Selberherr, Variance reduction in Monte Carlo device simulation by means of event biasing, in: Proceedings of the Conference on Modeling and Simulation of Microsystems, MSM 2001, 2001.