Low-temperature epitaxial growth of B doped Si films on Si(1 0 0) and Si(1 1 1)

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 274-278

  Schwarzkopf, J ^a   Selle, B ^a   Schmidbauer, M ^b   Fuhs, W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b HUMBOLDT UNIVERSITY   (Germany)

Author keywords

Plasma enhanced chemical vapor deposition; Si epitaxy

Indexed keywords

DOPING (ADDITIVES); EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON; X RAY DIFFRACTION ANALYSIS;

LATTICE STRAIN;

AMORPHOUS FILMS;

EID: 0037416554     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01208-7     Document Type: Conference Paper

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