Preparation and transport properties of Nb1-xCrxN epitaxial thin films on silicon wafers

Physica B: Condensed Matter

Volumn 328, Issue 1-2, 2003, Pages 123-124

  Inumaru, Kei ^a   Sakamoto, Koyo ^a   Okamoto, Hiroshi ^a   Yamanaka, Shoji ^a,b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Laser ablation; Molecular beam eptiaxy; Nitride; Superconductivity

Indexed keywords

ANNEALING; DEPOSITION; LASER ABLATION; MOLECULAR BEAM EPITAXY; NIOBIUM COMPOUNDS; SILICON WAFERS; SUPERCONDUCTIVITY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

DOMAIN STRUCTURE;

SUPERCONDUCTING FILMS;

EID: 0037400302     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)01825-2     Document Type: Conference Paper

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3. F.H. Horn, W.F. Brucksch Jr., W.T. Ziegler, D.H. Andrews, Phys. Rev. 61 (1942) 738. Roberts B.W. J. Phys. Chem. Ref. Data. 5:1976;581. and references therein.
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5. Inumaru K., Okamoto H., Yamanaka S. J. Crystal Growth. 237-239:2002;2050 Inumaru K., Ohara T., Yamanaka S. Appl. Surf. Sci. 158:2000;375.