High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers

Journal of Crystal Growth

Volumn 250, Issue 3-4, 2003, Pages 354-358

  Feng, G ^a   Shen, X M ^a   Zhu, J J ^a   Zhang, B S ^a   Zhao, D G ^a   Wang, Y T ^a   Yang, H ^a   Liang, J W ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. X ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION;

INTEGRATED INTENSITY;

CRYSTAL GROWTH;

EID: 0037399528     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02477-6     Document Type: Conference Paper

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