A novel method of determining semiconductor parameters in EBIC and SEBIV modes of SEM

Semiconductor Science and Technology

Volumn 18, Issue 4, 2003, Pages 361-366

  Zhu, Shi Qiu ^a   Rau, E I ^b   Yang, Fu Hua ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON BEAMS; ELECTRON ENERGY LEVELS; RELAXATION PROCESSES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

ELECTRIC BEAM INDUCED VOLTAGE; ELECTRON BEAM INDUCED CURRENT; SURFACE RECOMBINATION VELOCITY;

SEMICONDUCTOR MATERIALS;

EID: 0037395884     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/4/329     Document Type: Article

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