Thermo- and galvanomagnetic technique for semiconductors testing at high pressure up to 30 GPa

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 546-548

  Ovsyannikov, Sergey V ^a   Shchennikov, Vladimir V ^a  

^a INSTITUTE OF METAL PHYSICS   (Russian Federation)

Author keywords

Electron (hole) mobility; High pressure; Nernst Ettingshausen effects; Scattering parameter

Indexed keywords

GALVANOMAGNETIC EFFECTS; HIGH PRESSURE EFFECTS; HOLE MOBILITY; MAGNETORESISTANCE; PHASE TRANSITIONS;

SEMICONDUCTORS TESTING;

SEMICONDUCTOR MATERIALS;

EID: 0037395178     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00865-2     Document Type: Conference Paper

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