Infrared lateral photoconductivity of InGaAs quantum dot heterostructures grown by MOCVD

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 634-635

  Moldavskaya, L D ^a   Shashkin, V I ^a   Drozdov, M N ^a   Drozdov, Yu N ^a   Daniltsev, V M ^a   Murel, A V ^a   Andreev, B A ^a   Yablonsky, A N ^a   Gusev, S A ^a   Gaponova, D M ^a   Khrykin, O I ^a   Luk'yanov, A Yu ^a   Sadova, E N ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

FIR photoconductivity; Quantum dots

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; INFRARED DETECTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTIVITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

INTERSUBBAND TRANSITIONS;

HETEROJUNCTIONS;

EID: 0037395028     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00914-1     Document Type: Conference Paper

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