Two-dimensional "pseudo-donor-acceptor-pairs" model of recombination dynamics in InGaN/GaN quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 64-67

  Morel, A ^a   Lefebvre, P ^a   Taliercio, T ^a   Bretagnon, T ^a   Gil, B ^a   Grandjean, N ^b   Damilano, B ^b   Massies, J ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CRHEA CNRS   (France)

Author keywords

Donor acceptor pairs; InGaN GaN quantum wells; Recombination dynamics

Indexed keywords

ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

DONOR-ACCEPTOR PAIRS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037394811     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00762-2     Document Type: Conference Paper

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