Doping dependence of millimeterwave negative differential conductance in strain-compensated GaInAs/AlInAs superlattices

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 294-296

  Minot, Christophe ^a   Harmand, Jean Christophe ^a   Esnault, Jean Claude ^a  

^a CNRS   (France)

Author keywords

High frequency effects; Hopping transport; Superlattices

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTANCE; MILLIMETER WAVES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE;

HOPPING TRANSPORT;

SUPERLATTICES;

EID: 0037393512     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00808-1     Document Type: Conference Paper

References (3)

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2. Laikhtman B., Miller D. Phys. Rev. B. 48:1993;5395.
3. Palmier J.F., Minot C., Harmand J.C., Sibille A., Tanguy D., Penard E. Superlattices Microstruct. 25:1999;13.