Resonant tunnelling through single donor states in GaAs/AlAs/GaAs devices

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 303-304

  Gryglas, Marta ^a   Baj, Michal ^a   Jouault, Benoit ^b   Faini, Giancarlo ^b   Cavanna, Antonella ^c  

^a UNIVERSITY OF WARSAW   (Poland)

^b UNIV MONTPELLIER   (France)

^c CNRS   (France)

Author keywords

Resonant tunnelling; Single impurity; X minimum related donor

Indexed keywords

IMPURITIES; MAGNETIC FIELDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

X-MINIMUM-RELATED DONOR;

RESONANT TUNNELING;

EID: 0037391501     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00816-0     Document Type: Conference Paper

References (3)

1. Itskevich I.E., Eaves L., Main P.C., Henini M. Phys. Rev. B. 57:1998;7214.
2. Gryglas M., Przybytek J., Baj M., Eaves L., Henini M. High Pres. Res. 18:2000;63.
3. Schmidt T., Haug R.J., Fal'ko V.I., Klitzing K.v., Förster A., Lüth H. Phys. Rev. Lett. 78:1997;1540.