Asymmetric carrier transport in InGaAs quantum wells and wires grown on tilted InP substrates

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 169-171

  Monte, A F G ^a   Da Silva, S W ^a   Cruz, J M R ^a   Morais, P C ^a   Chaves, A S ^b  

^a UNIVERSITY OF BRASILIA   (Brazil)

^b FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

Author keywords

Asymmetric diffusion; Fractal diffusion; Quantum well; Quantum wire

Indexed keywords

DIFFUSION; ELECTRON TRANSPORT PROPERTIES; FRACTALS; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WIRES;

FRACTAL DIFFUSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037391438     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00736-1     Document Type: Conference Paper

References (5)

1. Cox H.M., Hummel S.G., Keramidas V.G. J. Crystal Growth. 79:1986;900.
2. Worlock J.M., Peeters F.M., Cox H.M., Morais P.C. Phys. Rev. B. 44:1991;8923.
3. Chen Y., Prabhu S.S., Ralph S.E., McInturff D.T. Appl. Phys. Lett. 72:1998;439.
4. Chaves A.S. Phys. Lett. A. 239:1998;13.
5. Monte A.F.G., da Silva S.W., Cruz J.M.R., Morais P.C., Chaves A.S. Phys. Lett. A. 268:2000;430.