Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 122-123

  Monte, A F G ^a   De Sales, F V ^a   Da Silva, S W ^a   Soler, M A G ^a   Cruz, J M R ^a   Morais, P C ^a   Da Silva, M J ^b   Quivy, A A ^b   Leite, J R ^b  

^a UNIVERSITY OF BRASILIA   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Carrier diffusion; Energy transfer; Potential barriers; Quantum dots

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

PHOTOEXCITED CARRIER DIFFUSION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037391403     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00741-5     Document Type: Conference Paper

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